| 摘要 |
PURPOSE: An isolation formation method of semiconductor devices is provided to improve a GOI(Gate Oxide Integrity) by preliminarily implanting inert gases into a shallow trench. CONSTITUTION: A shallow trench is formed by selectively etching a silicon substrate(11). An inert gas, such as argon(Ar) is implanted into the trench so that the silicon is transferred to an amorphous silicon. A sacrificial oxide(15a) is formed on the trench made of the amorphous silicon so as to remove an etch damage. An adhesive oxide layer(15b) is formed on the sacrificial oxide. A gap-fill oxide layer(16) is then filled into the trench. By annealing the resultant structure, the inert gas is removed.
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