| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for nondestructively, quickly and easily measuring a dislocation density in an epitaxial crystal covering a high density to a low density. SOLUTION: The epitaxial crystal is irradiated with the laser beam of a wavelength shorter than the wavelength corresponding to the crystal composition, and the in-plane distribution of the peak intensity of obtained photoluminescence light is measured. From the number (n) of an area (dark spot or dark line) where the intensity is especially weak and a measuring area (S cm2), the dislocation density (N cm-2) is calculated by the following equation (I), N=n/S (I).
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