THIN-FILM TRANSISTOR, ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY, AND ORGANIC EL DISPLAY AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the problem that variation in electric characteristics is caused by variation in the thickness of an oxide film existing on a semiconductor surface before crystallization treatment in a thin-film transistor by a polycrystalline semiconductor that is subjected to laser crystallization. SOLUTION: Average roughness in a polycrystalline silicon film is controlled to 5 nm or more and 10 nm or less, thus stably obtaining a transistor having a sufficient driving current. Also, the thickness of a silicon oxide film on an amorphous silicon surface before laser annealing is set to 1 nm or more and 5 nm or less, thus controlling the average roughness in the polycrystalline silicon film.