发明名称 |
Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same |
摘要 |
Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate. |
申请公布号 |
US2002058400(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20010984475 |
申请日期 |
2001.10.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO KYOICHI;SHIBATA TAKESHI;SUGIHARA KAZUYOSHI;MATSUO KOUJI |
分类号 |
G03F1/16;A61N5/00;B32B3/10;B32B9/04;B32B13/04;G03C5/00;G03F1/20;G03F9/00;G21G5/00;H01J37/317;H01L21/027;H01L21/26;H01L21/266;H01L21/324;H01L21/425;(IPC1-7):H01L21/425 |
主分类号 |
G03F1/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|