| 摘要 |
The apparatus for a perpendicular type ultra vacuum chemical vapor deposition, which is for growing an epitaxy crystal such as Si, SiGe, and SiGe:C as a semiconductor thin film based on a high quality, includes a growth chamber having a quartz tube of a heterostructure for maintaining a uniformity in a growth of an epitaxial layer under a high vacuum and minimizing a thermal transfer from a wafer; a wafer transferring chamber connected to a lower side of the growth chamber, said wafer transferring chamber having a perpendicular transfer device for vertically transferring the wafer on which the epitaxial layer grows; a buffer chamber equipped in a lower side of the wafer transferring chamber, for preventing a stress to a transfer gear caused by a pressure difference with the wafer transferring chamber in vertically transferring the wafer; and a loadlock chamber connected to one side of the wafer transferring chamber, for reducing a pollution from the outside in the growth of the epitaxial layer, horizontally transferring the wafer completed in the growth of the epitaxial layer, and discharging it to the outside.
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