发明名称 |
SiC MISFET |
摘要 |
<p>An MIS transistor that uses a silicon carbide substrate has a buried channel structure. The surface orientation of the silicon carbide substrate is optimized so that the device does not assume a normally on state, has good hot-carrier endurance and punch-through endurance, and high channel mobility. In particular, a P-type silicon carbide semiconductor substrate is used to form a buried channel region. To achieve high mobility, the depth at which the buried channel region is formed is optimized, and the ratio between buried channel region junction depth (Lbc) source and drain region junction depth (Xj) is made to be within 0.2 to 1.0. The device can be formed on any surface of a hexagonal or rhombohedral or a (110) surface of a cubic system silicon carbide crystal, and provides a particularly good effect when formed on the (11-20) surface. <IMAGE></p> |
申请公布号 |
EP1205981(A2) |
申请公布日期 |
2002.05.15 |
申请号 |
EP20010309581 |
申请日期 |
2001.11.13 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY;JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
发明人 |
FUKUDA, KENJI;ARAI, KAZUO;SENZAKI, JUNJI;HARADA, SHINSUKE;KOSUGI, RYOJI;ADACHI, KAZUHIRO |
分类号 |
H01L29/786;H01L21/04;H01L29/04;H01L29/24;H01L29/49;H01L29/78;(IPC1-7):H01L29/78;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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