首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
开关(3)
摘要
此设计创造要点部位在开关主视图,省略其右、俯视图。
申请公布号
CN3236797D
申请公布日期
2002.05.15
申请号
CN01341442.9
申请日期
2001.10.24
申请人
章方美
发明人
章方美
分类号
13-03
主分类号
13-03
代理机构
代理人
主权项
地址
325024浙江省温州市龙湾区海滨蟾钟工业区浙江龙翔电器有限公司
您可能感兴趣的专利
OPC ENLARGED DUMMY ELECTRODE TO ELIMINATE SKI SLOPE AT ESIGE
SEMICONDUCTOR DEVICES WITH SIDEWALL SPACERS OF EQUAL THICKNESS
SEMICONDUCTOR WAFER INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR LAYER SPACED APART FROM A POLY TEMPLATE LAYER
Organic Light Emitting Diode Display Device
IMAGE SENSORS AND METHODS OF FORMING THE SAME
STACKED FILTER AND IMAGE SENSOR CONTAINING THE SAME
DISPLAY PANEL
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) TRANSISTOR FOR ELECTROSTATIC DISCHARGE (ESD)
FLEXIBLE INTERCONNECTS FOR MODULES OF INTEGRATED CIRCUITS AND METHODS OF MAKING AND USING THE SAME
Die Bonder and Bonding Method
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
SEMICONDUCTOR PACKAGING STRUCTURE
SEMICONDUCTOR CHIP AND METHOD OF ESTIMATING CAPABILITY OF SEMICONDUCTOR MANUFACTURING SYSTEM
METHOD FOR RELAXING THE TRANSVERSE MECHANICAL STRESSES WITHIN THE ACTIVE REGION OF A MOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT
FIN STRUCTURE FORMATION BY SELECTIVE ETCHING
METHOD FOR COLLAPSE-FREE DRYING OF HIGH ASPECT RATIO STRUCTURES
METHODS OF FORMING A HARD MASK LAYER AND OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
Systems and Methods for Acquiring Data for Mass Spectrometry Images
Rectangular Hollow Sputter Source and Method of use Thereof