SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

摘要

To provide a novel semiconductor device or a semiconductor device capable of operating at high speed. The semiconductor device includes a plurality of circuits each having a function of storing data and a wiring EL. The plurality of circuits each include a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and the capacitor. The first transistor includes an oxide semiconductor in a channel formation region. The wiring EL has a function of a back-gate of the first transistor. A potential for selecting the plurality of circuits is supplied to the wiring EL. Thus, data stored in the plurality of circuits is erased.

主权项

1. A semiconductor device comprising:
a first circuit; a second circuit; and a wiring, wherein the first circuit is configured to store a first data, wherein the second circuit is configured to store a second data, wherein each of the first circuit and the second circuit comprises a first transistor, a second transistor, and a capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and the capacitor,wherein the first transistor includes an oxide semiconductor in a channel formation region, wherein the wiring is configured to be a back-gate of each of the first transistors of the first circuit and the second circuit, and wherein a potential for turning on the first transistors of the first circuit and the second circuit is supplied to the wiring so that the first data and the second data stored in the first circuit and the second circuit are erased.