| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for improving the yield of a semiconductor device for manufacturing high reliability semiconductor device, by preventing particles generated from unevenness formed on the surface of the rear of the semiconductor device excepting the element-forming surface. SOLUTION: The method comprises a step of forming an unevenness layer with uneven on the surface of the semiconductor substrate 1, including at least the element forming surface (front side) of the substrate 1, and a step of planarizing the unevenness formed on the surface of the semiconductor substrate excepting the element-forming surface. |
