| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element as a blue green region light emitting element with high performance and its fabricating method. SOLUTION: A GaAs substrate is subjected to anodization to fabricate a porous layer 102, and the surface holes of the porous layer 102 is sealed. A II-VI group compound semiconductor having almost the same lattice constant as GaAs is deposited on a sealed porous GaAs surface layer 103. In this constitution, the extra-thin GaAs layer 103 on the surface of the GaAs substrate relaxes distortion caused by a difference in rate of thermal expansion between the substrate and the growth layer after the growth is completed, so superior II-VI group compound semiconductor crystal with small defective density can be grown on the GaAs substrate. When a semiconductor laser is formed by the II-VI group compound semiconductor on the GaAs substrate, crystal growth at an active layer can be improved greatly. Then, a high-performance blue-green region semiconductor laser with small oscillation threshold value and long life is realized.
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