发明名称 |
Process for fabricating semiconductor device |
摘要 |
A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
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申请公布号 |
US2002055208(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20010995558 |
申请日期 |
2001.11.29 |
申请人 |
OHTANI HISASHI;FUKUNAGA TAKESHI;MIYANAGA AKIHARU |
发明人 |
OHTANI HISASHI;FUKUNAGA TAKESHI;MIYANAGA AKIHARU |
分类号 |
H01L21/20;H01L21/336;H01L21/36;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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