发明名称 Process for fabricating semiconductor device
摘要 A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
申请公布号 US2002055208(A1) 申请公布日期 2002.05.09
申请号 US20010995558 申请日期 2001.11.29
申请人 OHTANI HISASHI;FUKUNAGA TAKESHI;MIYANAGA AKIHARU 发明人 OHTANI HISASHI;FUKUNAGA TAKESHI;MIYANAGA AKIHARU
分类号 H01L21/20;H01L21/336;H01L21/36;(IPC1-7):H01L21/84 主分类号 H01L21/20
代理机构 代理人
主权项
地址
您可能感兴趣的专利