发明名称 |
Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide |
摘要 |
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.
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申请公布号 |
US2002053299(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20010012668 |
申请日期 |
2001.10.30 |
申请人 |
MARSH EUGENE P.;UHLENBROCK STEFAN |
发明人 |
MARSH EUGENE P.;UHLENBROCK STEFAN |
分类号 |
C23C16/18;C23C16/40;H01L21/02;H01L21/285;(IPC1-7):C23C16/16 |
主分类号 |
C23C16/18 |
代理机构 |
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主权项 |
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地址 |
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