| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to guarantee a define margin caused by scale down of the device and to solve a problem caused by a chemical mechanical polishing(CMP) process. CONSTITUTION: The first oxide layer is formed on a semiconductor substrate(31). A polysilicon layer for a mask is formed on the first oxide layer. The polysilicon layer is selectively removed to form a polysilicon pattern. The first oxide layer is selectively eliminated to form the first oxide layer pattern by using the polysilicon pattern as a mask. The first conductive layer and the second oxide layer(43) are sequentially formed on the entire surface including the polysilicon pattern. A predetermined thickness from the surface of the second oxide layer is etched back. The first conductive layer formed on the first oxide layer pattern and the polysilicon pattern are polished by a CMP process. The third oxide layer is formed on the semiconductor substrate to desorb particles generated in the CMP process. The third oxide layer is etched back, and a cleaning process is performed. The first oxide layer pattern and the second oxide layer are eliminated. A dielectric layer and the second conductive layer are sequentially formed on the entire surface including the first conductive layer.
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