| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating method which forms an adequately covered film, as a result of delivering a plating solution into a concave such as a contact hole, which is shaped on a surface to be plated of a workpiece such as a semiconductor wafer. SOLUTION: The plating method comprises the first step of wetting the concave 80 shaped on the surface to be plated of the workpiece W with deionized water 82 by contacting the surface with the deionized water 82, and the second step of forming a copper film on the surface to be plated of the workpiece in wetting condition with an electroplating after immersing the workpiece in a plating solution 14. This method of wetting an inner face of the concave 80 by contacting the surface of the workpiece with deionized water as a pre- treatment of electroplating, makes the plating solution easily get into the concave, and prevents failure of the formed film.
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