发明名称 |
Ion implantation method for fabricating magnetoresistive (MR) sensor element |
摘要 |
A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.
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申请公布号 |
US6383574(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US19990360118 |
申请日期 |
1999.07.23 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
HAN CHERNG-CHYI;XIAO RONG-FU;CHEN MAO-MIN;WANG PO-KANG |
分类号 |
C23C14/48;H01F41/30;H01L21/8246;H01L27/22;H01L43/12;(IPC1-7):B05D5/00;B05D3/06;C23C14/16;C23C14/58 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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