| 摘要 |
<p>PURPOSE: To reduce parasitic resistance in a Zener diode for input protection, and to increase the gate insulating film protection function in the Zener diode. CONSTITUTION: An insulating film 103 in the arrangement region of the Zener diode has a plurality of groove sections 108 successively aligned in the extension direction D1 of each semiconductor region composing the diode. Each groove section 108 is extended in a width direction D2 of each semiconductor region, and has a depth T3. Each semiconductor region is provided on an upper surface 111S of the insulating film 103. As a result, each semiconductor region has a plurality of uneven shapes aligned in the extension direction D1, the Zener diode has a perimeter length not only in the horizontal direction D1 but also a vertical one D3, and pn junction area in the Zener diode is increased.</p> |
