| 摘要 |
An SRAM cell is described which has a reduced cell area, and a reduced processing cost from conventional SRAM's. A fabrication process is described where self-aligned contacts to substrate active area and contact to a first layer of polysilicon are formed in one etch step. Electrical connection between the substrate and polysilicon is provided through a conductive layer coupled to the contacts. Self aligned contacts are fabricated to contact the active area.
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