| 摘要 |
PURPOSE: A fabrication method of an image sensor is provided to improve a sensibility and to reduce a dark current by using an epitaxial layer filled in a trench as a conductive layer. CONSTITUTION: A lightly doped drain region(24) is formed in a semiconductor substrate(21) having an isolation layer(22). A trench is formed by etching the light doped drain region using a first oxide layer as a mask. An epitaxial layer(27) is grown in the trench by SEG(Selective Epitaxial Growth) and a second oxide layer(28) is formed between the trench and the epitaxial layer(27). After removing the first oxide layer, a gate pattern(30) is formed. A conductive layer(32) is formed on the surface of the lightly doped drain region by implanting heavily doped dopants.
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