| 摘要 |
PURPOSE: A method for fabricating an electrostatic discharge(ESD) protection device is provided to prevent a current crowding effect from occurring in a relatively shorter base region due to an unbalanced field oxide layer during a bipolar action and thereby to improve ESD protection reliability. CONSTITUTION: In the ESD protection device employing a field transistor, the field oxide layer(12) is formed in LOCOS form. Next, an ion implantation process is performed for forming active regions(20,30,40). Here, contrary to a conventional mask exposing the field oxide layer as well as the active regions, an ion implantation mask(70) exposes the active regions(20,30,40) only, especially except irregular boundaries with the field oxide layer(12) caused by bird's beak. Therefore, a length(BL) of the base region becomes uniform in all the active regions(20,30,40), so that the current crowding effect does not occur in the bipolar action.
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