发明名称 METHOD FOR REMOVING RING-SHAPED RESIDUE FROM EDGE OF WAFER
摘要 PURPOSE: A method for removing a ring-shaped residue from an edge of a wafer is provided to remove effectively the ring-shaped residue formed on the edge of the wafer by using an anti-reflected coating layer. CONSTITUTION: An anti-reflected coating layer is formed on a main surface of a wafer(S21). The first pre-bake process for the wafer including the anti-reflected coating layer is performed under 80 to 100 degrees centigrade(S22). The wafer is exposed by cleaning a predetermined portion of the anti-reflected coating layer(S23). The second pre-bake process for the remaining anti-reflected coating layer is performed under 150 to 250 degrees centigrade(S24). A photo-resist is coated on the hardened anti-reflected coating layer(S25). A solvent is removed by performing a soft bake process for the photo-resist(S26). An exposure process is performed by using the photo-resist as a mask(S27). A hard bake process for the remaining photo-resist is performed(S28).
申请公布号 KR20020032187(A) 申请公布日期 2002.05.03
申请号 KR20000063204 申请日期 2000.10.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 OH, HYEON SEON
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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