| 摘要 |
PURPOSE: A method for forming a via contact in a semiconductor device is provided to be capable of improving reliability and yield of devices by forming an insulating spacer at both sidewalls of the first metal wiring. CONSTITUTION: The first metal wiring(2) is formed on a semiconductor substrate(1). An anti-reflective layer(3), the first intermetal dielectric and a planarization layer(5) are sequentially formed on the first metal wiring. An insulating spacer(4) is then formed at both sidewalls of the first metal wiring(2) by selectively etching the first intermetal dielectric. After forming the second intermetal dielectric on the resultant structure, a via contact hole(8) is formed by selectively etching the second intermetal dielectric. The second metal wiring(9) is formed to connect the first metal wiring through the via contact hole.
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