METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of capacitors is provided to improve capacitance without forming a high Pt stack by forming a Ru metal on a Pt metal. CONSTITUTION: A contact hole is formed by sequentially depositing and pattering an oxide(2) and a nitride(6) on a silicon substrate(1). A polysilicon plug(3) is filled into the contact hole. After forming a contact recess by etch-backing the polysilicon plug, a TiSix film(4) is formed on the contact recess. After forming a diffusion barrier metal(5) on the resultant structure, a seed Pt film(7) is formed on the diffusion barrier metal. By sequentially depositing and patterning a glue layer and a dummy oxide, a contact hole is formed. A Pt film and a Ru film are sequentially filled into the contact hole by electroplating, thereby forming double lower electrodes.