| 发明名称 |
Method of manufacturing a semiconductor device |
| 摘要 |
Well printing a specified pattern even when exposure treatment using a resist mask uses exposure light with a wavelength over 200 nm. When exposure treatment is applied to a semiconductor wafer 1W by using exposure light EXP with a wavelength over 200 nm, a photomask MR is used. The photomask MR is provided with an opaque pattern 5 comprising a resist layer 4a on a photoabsorptive organic layer 3a in reaction to exposure light EXP.
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| 申请公布号 |
US2002052122(A1) |
申请公布日期 |
2002.05.02 |
| 申请号 |
US20010931938 |
申请日期 |
2001.08.20 |
| 申请人 |
TANAKA TOSHIHIKO;HASEGAWA NORIO;MORI KAZUTAKA;MIYAZAKI KO;TERASAWA TSUNEO |
发明人 |
TANAKA TOSHIHIKO;HASEGAWA NORIO;MORI KAZUTAKA;MIYAZAKI KO;TERASAWA TSUNEO |
| 分类号 |
G03F1/08;G03F1/10;G03F1/54;G03F1/56;G03F7/00;G03F7/20;G03F7/22;H01L21/027;H01L21/3205;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
G03F1/08 |
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