| 摘要 |
PROBLEM TO BE SOLVED: To provide a DAD for improved latch-up resistance and stable voltage- resistant characteristics. SOLUTION: A first gate electrode 10 and a second drain electrode 13 are linear electrodes whose lengths are shorter than that of a source electrode 9 with an isolating region 20 provided at both ends, and a region surrounded with two isolating regions and the source electrode 9 is a P-channel MOS region PR where a P-channel MOS transistor is formed. The isolating region 20 has a multi-trench structure where a plurality of trenches 21 are provided in a P-type impurity region so arranged as to be almost square in top view. Each trench 21 is filled with a conductor such as a polysilicon, with the conductor so formed as not to be electrically connected to another particular part.
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