发明名称 VOLTAGE LEVEL DETECTING CIRCUIT AND VOLTAGE GENERATING CIRCUIT USING THE SAME
摘要 PURPOSE: A voltage level detecting circuit and a voltage generating circuit using the same is provided to stabilize a fed-back voltage level although a voltage detection level is varied according to process variation, and to improve an operating speed by reducing a variation width of the fed-back voltage. CONSTITUTION: A PMOS transistor(M5) and an NMOS transistor(N11) are connected in series between an internal power supply voltage(VINT) and a node(F), and have their gates connected to receive a high voltage(VPP) respectively. An NMOS transistor(N12) is connected between the node(F) and a ground voltage, and has a gate connected to receive a voltage(Vout1). A differential amplifier(AMP1) amplifies a difference between a reference voltage(Vref) and a voltage of the node(F), and generates the voltage(Vout1). An inverter(I13) receives the voltage(Vout1) to generate a high voltage detection signal(VPPS).
申请公布号 KR20020030583(A) 申请公布日期 2002.04.25
申请号 KR20000061574 申请日期 2000.10.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, GYU NAM
分类号 G05F3/24;(IPC1-7):G11C5/14 主分类号 G05F3/24
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