发明名称 CAPACITOR OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A capacitor of a semiconductor device is provided to simplify a fabricating process by simply stacking a lower electrode, and to effectively increase capacitance by eliminating the need to use additional equipment. CONSTITUTION: An insulation layer is formed on a semiconductor substrate(41). A plug(43) penetrates the insulation layer and is connected to the semiconductor substrate. The lower electrode(50) is formed on the plug and the insulation layer adjacent to the plug. Both side surfaces of the lower electrode have a structure of a roughness type. The lower electrode includes a plurality of metal layers and a plurality of polysilicon layers formed between the metal layers.
申请公布号 KR20020030479(A) 申请公布日期 2002.04.25
申请号 KR20000061311 申请日期 2000.10.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JI, SEUNG HEON
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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