| 摘要 |
PURPOSE: A DRAM(Dynamic Random Access Memory) and a method for driving the same are provided to perform a non-destructive write and read operation by discharging selectively charges of a neighboring capacitor induced by a ferroelectric capacitor. CONSTITUTION: The first capacitor(3) is serially connected with the second capacitor(4). The first switching element(1) such as a p-channel FET or an n-channel FET is connected with the first capacitor(3) in order to charge the first and the second capacitors(3,4). The first capacitor(3) is formed with a ferroelectric capacitor. The second switching element(2) such as the p-channel FET or the n-channel FET is connected with a contact between the first and the second capacitors(3,4) in order to discharge selectively the bound charges. The first and the second switching elements(1,2) are formed with the p-channel FET or the n-channel FET of the same type.
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