| 摘要 |
A mask material which is the same as that of a wafer to be exposed is prepared (step Q1), and the proximity effect correction dose for mask-writing is operated. Then, a resist film of the mask material is exposed by a pattern accompanying a correction dose twice the proximity effect correction dose in mask-writing at the same accelerating voltage as in wafer-exposing (step Q2). Next, the resist film is developed to form a resist film pattern, and the mask material is etched by using the resist film pattern as a mask, whereby a mask is prepared (step Q3). Thereafter, by using this mask, the resist film on the wafer is EB-exposed without proximity effect correction (step Q4). According to the present invention, the time required for calculation processing is shortened and the calculation accuracy is improved. |
