| 摘要 |
optoelectronic devices. SUBSTANCE: invention can be employed in manufacture of displays, light-emitting diodes and shutters of superconducting structures of type of metal-dielectric- semiconductor. Process includes magnetron spraying of target made of indium-tin alloy in atmosphere of argon and oxygen, deposition of oxide film and its annealing in high vacuum at temperature of 400 C in the course of 30.0 min as minimum. EFFECT: improved electrical characteristics of films based on indium and tin oxides, decreased labor input to process of film production.
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