| 摘要 |
The heating device (10) comprises the infrared radiation lamps (24,26) mounted in two levels (A,B) inside a casing (28) and a distribution grid (36) for conducting a fast heat-treatment of a substrate (12) placed inside a reaction chamber (14) which is equipped with a transparent window or porthole (34). The lamps (24) of the lower level (A) are laid out perpendicular to the lamps (26) of the upper level (B), and the distribution grid (36) is configured so to reflect and channel the infrared radiation for the control of power ratios between different heating zones. The control of power supplied to groups of lamps (24,26) ensures more intense heating at edges than at the center of the substrate in order to compensate the effects of thermal losses at edges by convection. The distribution grid (36) is formed by intersecting planes demarcating a set of compartments at variable sections related to the heating zones, and is laid out between the lamps and the window (34), or bound-up between the lamps. The plates are crossed at a right angle, and are made of material having an optimum index of reflection for the infrared radiation. The material is nonmetallic, such as ceramic or on the basis of zirconium, or metallic such as steel, aluminum, or plated with gold or silver. The distribution grid is cooled by a heat-carrying fluid. The lamps are halogen type. Each level (A,B) comprises the same number of tubular lamps spaced at regular intervals and in mutually parallel mounting. A reactor for fast thermal processing is equipped with the heating device.
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