Process for the cleaning of an etched integrated circuit component comprising copper associated with a dielectric for removal of residues created by the plasma etching, particularly polymeric materials

摘要

Cleaning of a copper/dielectric combination by a composition comprising 35 - 85% of dimethylsulfoxide(DMSO) or N-methylpyrrolidone(NMP), 11- 49% of methoxy-propylamine(MOPA), 0 - 8% of water and 0 - 10% of a copper corrosion inhibitor.