发明名称 SUBSTRATE-TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To reduce an operation loss by suppressing the frequency of chamber maintenance with respect to a number of original substrate treatments. SOLUTION: A substrate-treating apparatus comprises a treating chamber vacuum chamber 1) for treating the substrate 7 under reduced pressure, a preliminary chamber connected to the chamber 1 via a gate valve 2, and a means for conveying the substrate 7 between the chamber 1 and the preliminary chamber. The chamber 1 has a plurality of exhaust ports 5, and at least one exhaust port (sub-exhaust port 9) is disposed near the gate valve. As a result, another vacuum exhaust port is installed near the valve except the vacuum exhaust port for evacuating of in the original chamber 1. Retention of the gas neat the valve is reduced by the vacuum evacuation, the valve 2 and a deposition generated near the valve are reduced. The operational cost of the apparatus is reduced, when the substrate is treated continuously over a long period.
申请公布号 JP2002118093(A) 申请公布日期 2002.04.19
申请号 JP20000312025 申请日期 2000.10.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ITSUNOI DAISUKE
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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