| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems of crystallinity not recovering and not yielding efficient activation of an impurity element, even though heat treatment is applied to a semiconductor film, to which the impurity element has been doped. SOLUTION: When doping an impurity element is doped to a semiconductor film is made at a temperature of 200 deg.C or lower, by doping the impurity element at a low temperature, and amorphous state can be created with a small amount of the impurity element. By applying a heat treatment thereafter, recovery of the crystallinity and activation of the impurity element can be efficiently performed.
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