发明名称 Stress-follower circuit configuration
摘要 Briefly, in accordance with one embodiment of the invention, an integrated circuit includes: a stress-follower circuit configuration. The stress-follower circuit of the configuration is coupled to a pad of the integrated circuit. The stress-follower circuit configuration is coupled so as to reduce the voltage stress on the gate of a transistor in a transistor stack so that in operation the transistor in the stack tolerates an operating voltage approximately 1.5 volts above its nominal voltage. The transistor stack is also coupled to the pad.
申请公布号 US2002044400(A1) 申请公布日期 2002.04.18
申请号 US20010015727 申请日期 2001.11.01
申请人 ALLEN MICHAEL J. 发明人 ALLEN MICHAEL J.
分类号 H03K17/082;H03K17/10;H03K19/003;(IPC1-7):H02H3/20;H02H3/24 主分类号 H03K17/082
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