发明名称 |
Semiconductor device and its manufacturing method |
摘要 |
A non-volatile semiconductor memory device which simultaneously possesses a non-volatile memory cell region which possesses an isolating insulation film which has been formed selectively within a semiconductor substrate, which also possesses a first electroconductive film (floating gate electrode) via a first gate insulating film which has been formed on the semiconductor substrate surface, and which also possesses a metal film (control gate electrode) via a second gate insulating film which has been formed above said electroconductive film and a peripheral transistor region which possesses a metal film (gate electrode) via a third gate insulating film which has been formed above the semiconductor substrate surface.
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申请公布号 |
US2002043683(A1) |
申请公布日期 |
2002.04.18 |
申请号 |
US20010964592 |
申请日期 |
2001.09.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAKAGAWA SHIN-ICHI;IIJIMA MITSUTERU |
分类号 |
H01L21/28;H01L21/316;H01L21/8247;H01L27/10;H01L27/105;H01L27/115;H01L29/423;H01L29/43;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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