| 摘要 |
A semiconductor memory device is provided that can accurately read data for an extended period of time. A comparator CMPn for measuring a data judgment voltage produced at the time of reading data is connected to bit lines BLn and BLnB. The comparator CMPn is connected through a low voltage detecting section 12 to a loading capacitance control section 14. Capacitors ECU1, EC12, . . . are connected to the bit line BLn through transistors ST11, ST12, . . . A loading capacitor LCn1 is constituted with capacitors chosen by the loading capacitance control section 14 from the capacitors EC11, EC12, . . . A loading capacitor LCn2 is constituted likewise. When the data judgment voltage decreases due to deterioration of ferroelectric capacitors FC1 and FC2, the decrease is detected with the low voltage detecting section 12 and the loading capacitance control section 14 changes the respective constitutions of the loading capacitors LCn1 and LCn2. Thus, the data judgment voltage is restored.
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