首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
管道过滤器
摘要
本实用新型涉及一种防止管道介质中污物在管子内沉积的过滤件。它主要由带有滤腔的管接体,装在滤腔内的滤网,固定在滤腔端口、带排污孔的排污盖和顶在排污孔上的排污塞组成。排污塞内开有排泄孔,并与排污塞下部的筒体间隙腔相通。当排污塞旋离排污孔时,沉积在滤腔内的杂质,通过间隙腔、排泄孔被冲刷出体外。它具有结构合理,安装、排污方便等优点,可广泛应用在医药、化工、制冷、冶金等行业管道系统上。
申请公布号
CN2486820Y
申请公布日期
2002.04.17
申请号
CN01245777.9
申请日期
2001.06.04
申请人
梁启良
发明人
梁启良
分类号
F16L55/24;B01D35/04
主分类号
F16L55/24
代理机构
代理人
主权项
1、一种管道过滤器,包括带有滤腔(4)的管接体(1),装在滤腔(4)内的滤网(5),固定在滤腔(4)端口的排污盖(7),其特征在于:排污盖(7)下部设有带内螺纹的筒体(7a),排污盖(7)盖面在相对滤腔(4)沉积物位置处开有排污孔(12),排污孔(12)上顶有排污塞(9),排污塞(9)下部与排污盖(7)下部的筒体(7a)螺纹连接,上部与筒体(7a)之间有间隙腔(11),排污塞(9)内开有与间隙腔(11)相通的排泄孔(9a)。
地址
317600浙江省玉环县城关西城路166号
您可能感兴趣的专利
Trench Vertical JFET With Improved Threshold Voltage Control
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
SUPPRESSION OF BACK-GATE TRANSISTORS IN RF CMOS SWITCHES BUILT ON AN SOI SUBSTRATE
LATERAL BIPOLAR JUNCTION TRANSISTOR (BJT) ON A SILICON-ON-INSULATOR (SOI) SUBSTRATE
NANOWIRE SEMICONDUCTOR DEVICE INCLUDING LATERAL-ETCH BARRIER REGION
SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
IMAGE SENSOR CHIP PACKAGE AND FABRICATING METHOD THEREOF
ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, X-RAY FLAT PANEL DETECTOR, IMAGE PICKUP SYSTEM
ARRAY SUBSTRATE OF X-RAY SENSOR AND METHOD FOR MANUFACTURING THE SAME
Method Of Making Low Profile Sensor Package With Cooling Feature
BACKSIDE ILLUMINATION IMAGE SENSOR AND IMAGE-CAPTURING DEVICE
SEMICONDUCTOR DEVICE
ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS
SEMICONDUCTOR DEVICE HAVING RECESSED EDGES AND METHOD OF MANUFACTURE
CORROSION RESISTANT ALUMINUM BOND PAD STRUCTURE
SELF ALIGNED VIA IN INTEGRATED CIRCUIT
SEMICONDUCTOR PACKAGE WITH SMALL GATE CLIP AND ASSEMBLY METHOD
SEMICONDUCTOR DEVICE
HEAT ISOLATION STRUCTURES FOR HIGH BANDWIDTH INTERCONNECTS