| 摘要 |
PURPOSE: A semiconductor device is provided to guarantee an align margin with a conductive layer by forming a sufficiently fine contact hole, and to increase integration of the semiconductor device by forming an ultrafine contact hole without using a photo mask of a fine pattern. CONSTITUTION: The conductive layer(32) is formed in a predetermined region of a semiconductor layer. The first insulation layer is formed on the semiconductor layer. The second insulation layer is formed on the first insulation layer. The third insulation layer is formed on the second insulation layer. The contact hole(37) has the first size in the third insulation layer and has the second size smaller than the first size in the first and second insulation layers.
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