发明名称 Nonvolatile semiconductor memory
摘要 One page buffer is connected to one bit line. The page buffer latches program data for a selected memory cell. A plurality of page buffers are connected to a sense amplifier in a read/write circuit through a column gate. In a verify read, read data of a selected column is detected using a sense amplifier used in a normal data read. The read data detected by the sense amplifier, i.e., the verify read result is transferred to the page buffer of the selected column. The value of program data in the page buffer is changed on the basis of the verify read result.
申请公布号 US6373748(B2) 申请公布日期 2002.04.16
申请号 US20010842406 申请日期 2001.04.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IKEHASHI TAMIO;IMAMIYA KENICHI
分类号 G11C16/02;G11C16/04;G11C16/34;(IPC1-7):G11C16/06 主分类号 G11C16/02
代理机构 代理人
主权项
地址