RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF RUTHENIUM THIN FILM OR RUTHENIUM COMPOUND THIN FILM

摘要

PROBLEM TO BE SOLVED: To obtain a ruthenium compound for a chemical vapor deposition, capable of producing a ruthenium thin film or a ruthenium compound thin film having excellent morphology even in the cases of high-temperature deposition and excellent step coverage and producing a thin film having relative low resistivity. SOLUTION: This ruthenium compound is useful for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method and is a ruthenium compound for a chemical vapor deposition comprised of an acylcyclopentadienyl(cyclopentadienyl)ruthenium substituted with a straight-chain or branched-chain hydrocarbon group. The ruthenium compound has excellent morphology even in the case of a decomposition at a relatively high temperature of 250-450 deg.C and can produce a ruthenium thin film having low resistivity.