METHOD AND APPARATUS FOR FORMING SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To form a semiconductor thin film having excellent homogeneity of each of a film composition structure and a film thickness. SOLUTION: A method for forming a semiconductor thin film comprises the steps of supporting a substrate M having a thin film on a surface by a support 4, providing a gas outlet 12A of a hydrogen radical oppositely to the surface of the thin film of a substrate, supplying the radical H from the outlet 12A to the thin film in a state in which the support 4 is cooled to a temperature condition lower than 40K by a thermal conduction by a refrigerator 3, and forming the thin film on the substrate M.