| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, capable of reducing source parasitic resistance and improving the device characteristics in a gallium nitride-based compound semiconductor device. SOLUTION: An active layer 2, composed of a gallium nitride-based compound semiconductor, is formed on a board 1 to form an ohmic metal layer 3 on the active layer 2, photoresist 4 having an opening part 4a is formed thereon to form a larger opening part 3a than the opening part 4a on the ohmic metal layer 3 as the photoresist 4 is made a mask, and a gate electrode 5 is formed self-adjustably with respect to a source electrode 3s and a drain electrode 3d, by forming a gate metal layer on the photoresist 4 and removing the photoresist 4.
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