SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To fully reduce the leakage current of a capacitor and to enhance the breakdown voltage of the capacitor. SOLUTION: A semiconductor device comprises a capacitor constituted by inserting a high dielectric film between a lower electrode 13 and an upper electrode 16. In this case, a dielectric film and the electrode 13, a silicon oxide film 14 and an amorphous Ta2O5 film 15 of high quality of a thickness of 6 to 10 nm are laminated on a cobalt silicide (CoSi2) film.