| 摘要 |
PROBLEM TO BE SOLVED: To realize a resonance tunnel diode RTD improving its P/V ratio by suppressing a heat-excited current and a surface current of the RTD. SOLUTION: A method for manufacturing the RTD comprises the steps of steam-oxidizing a compound semiconductor having a high Al composition, that is, an AlAs layer to form a barrier layer 24 and a barrier layer 26 made of an Al2O3.
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