| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser diode, where a passivation layer is formed through a self alignment method by the use of an etching mask used in an etching process carried out for the formation of a ridge structure, a P-type electrode is stably formed, and processes can be simplified. SOLUTION: This manufacturing method comprises a first step of successively forming a buffer layer, a first clad layer, a first waveguide layer, an active layer, a second waveguide layer, a second clad layer, and a cap layer on a substrate, a second step of patterning the cap layer and the second clad layer into a ridge composed of the cap layer as an upper layer and the clad layer as a lower layer, a third step of selectively forming passivation layer so as to cover the ridge-shaped second clad layer around the cap layer, and a fourth step of forming an electrode on the passivation layer coming into contact with the cap layer.
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