| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method and an apparatus thereof, which can suppress dispersion of treatment on the center side section and the peripheral side of a wafer, even without reaction making the weakened or the pressure and a gas flow rate in a chamber being restricted strictly by suppressing the occurrence of plasma at performing of plasma treatment, such as plasma etching and plasma CVD. SOLUTION: A lower electrode 1 on which the wafer 3 can be placed and an upper electrode 2 facing the lower electrode are arranged in the chamber 6, which is made vacuum and into which gas can be introduced. A focusing ring 4 is disposed around the wafer 3 on the lower electrode 1. A power source 5 applying high frequency power is connected between the lower electrode 1 and the upper electrode 2. An impedance-adjusting means is installed in the focusing ring 4.
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