发明名称 |
Process of manufacturing semiconductor device |
摘要 |
A process of manufacturing a semiconductor device having a dual gate CMOS transistor in which an nMOS transistor in the dual gate CMOS transistor is formed by the steps of: (a) forming a gate insulating film and a silicon film on a semiconductor substrate; (b) implanting n-type impurities into the silicon film in an nMOS region of the semiconductor substrate; (c) forming a conductive film on the silicon film; and (d) patterning the silicon film and the conductive film into a gate electrode.
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申请公布号 |
US2002042173(A1) |
申请公布日期 |
2002.04.11 |
申请号 |
US20010829068 |
申请日期 |
2001.04.10 |
申请人 |
TAKAMURA YOSHIJI |
发明人 |
TAKAMURA YOSHIJI |
分类号 |
H01L21/28;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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