发明名称 METHOD FOR PLATING COPPER THIN FILM
摘要 PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact holes. SOLUTION: An aqueous solution of copper silicofluoride is used as an electrolytic solution, and copper thin films are selectively deposited on copper seed layers by plating.
申请公布号 JP2002105687(A) 申请公布日期 2002.04.10
申请号 JP20000291585 申请日期 2000.09.26
申请人 MORITA KAGAKU KOGYO KK;HARA TORU 发明人 HARA TORU;MIYAMOTO MITSUO;OSADA TOSHIAKI;ISHIDA SHOICHI;SAKAMOTO HITOSHI;TATENO TOSHIO
分类号 C25D3/38;C25D7/00;C25D7/12;H01L21/288;H01L23/14;H05K3/18;(IPC1-7):C25D3/38 主分类号 C25D3/38
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