发明名称 METHOD FOR PRODUCING SEMICONDUCTOR WAFER
摘要 <p>The present invention provides a process for manufacturing a semiconductor wafer capable of effectively reducing unevenness having a wavelength of 0.5 mm or more which remains on a surface of the semiconductor wafer after a first polishing step and improving flatness thereof and a semiconductor wafer manufactured by the manufacturing process. The manufacturing process comprises: plural polishing steps including a first polishing step and a final polishing step; and a corrective polishing step performed after the first polishing step using a polishing cloth harder than that used in the first polishing step. &lt;IMAGE&gt;</p>
申请公布号 EP1195798(A1) 申请公布日期 2002.04.10
申请号 EP20010921795 申请日期 2001.04.06
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 UENO, JUNICHI;MASUMURA, HISASHI;HASHIMOTO, HIROMASA
分类号 H01L21/302;B24B37/00;B24B37/04;B24B37/20;B24B37/24;B24D3/28;H01L21/306;(IPC1-7):H01L21/304;H01L29/30 主分类号 H01L21/302
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