发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR WAFER |
摘要 |
<p>The present invention provides a process for manufacturing a semiconductor wafer capable of effectively reducing unevenness having a wavelength of 0.5 mm or more which remains on a surface of the semiconductor wafer after a first polishing step and improving flatness thereof and a semiconductor wafer manufactured by the manufacturing process. The manufacturing process comprises: plural polishing steps including a first polishing step and a final polishing step; and a corrective polishing step performed after the first polishing step using a polishing cloth harder than that used in the first polishing step. <IMAGE></p> |
申请公布号 |
EP1195798(A1) |
申请公布日期 |
2002.04.10 |
申请号 |
EP20010921795 |
申请日期 |
2001.04.06 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
UENO, JUNICHI;MASUMURA, HISASHI;HASHIMOTO, HIROMASA |
分类号 |
H01L21/302;B24B37/00;B24B37/04;B24B37/20;B24B37/24;B24D3/28;H01L21/306;(IPC1-7):H01L21/304;H01L29/30 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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