| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide superconductive structure formed by 123 forming type oxide superconductive structure on a substrate by the liquid phase epitaxial method (LPE method) through a seed crystal film which is easy to control (wide control tolerance), when forming crystal film. SOLUTION: On the substrate 14, there is formed an oxide layer (seed film) 12 which is structured with Ln-A-M-O (Ln represents Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, A represents Ba or Sr, M represents Fe, Ni or Mo), and the oxide superconductive film 16 having a crystal structure of Ln1.Ba2.Cu3.O7-a type (Ln represents Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu) is formed using a liquid growing method.
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